Influences of MOS Device Characteristic under Different Oxygen-Dose Participations in the Silicon Substrate

Abstract:

A silicon substrate is the starting point of producing the semiconductor component, so that the quality of semiconductor substrate is very important during the VLSI fabrication. In this paper, we will evaluate the influence of MOS device characteristics under different oxygen impurities in silicon substrates. In the course of silicon substrate pulling process by Czochralski method, the defect and impurity will be existed; the oxygen atom will be induced substrate dislocations and affected the substrate quality. In this work, different oxygen doses will be used in wafer to study the impacts on MOS CV curve characteristic, interface trap charge characteristic, I_D-V_DS curve, I_D-V_GS curve, and threshold voltage behaviors of MOS devices.

• Periodical: Key Engineering Materials (Volumes 656-657)
• Pages: 8-13
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.656-657.8
• Online since: July 2015
• Authors: Shen Li Chen*, Tsung Shiung Lee, Yu Ting Huang
• Keywords: Czochralski Method, Interface Trap Density (D_it), Substrate Oxygen Dose, Threshold Voltage

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