Effect of Annealing Temperature on NiO/ZnO Heterojunction Thin Films Prepared by Sol-Gel Method

Tanattha Rattana; Sumetha Suwanboon; Chittra Kedkaew; Kumariga Wanichchang; Attapol Choeysuppaket

doi:10.4028/www.scientific.net/KEM.675-676.225

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 675-676Effect of Annealing Temperature on NiO/ZnO...

Effect of Annealing Temperature on NiO/ZnO Heterojunction Thin Films Prepared by Sol-Gel Method

Abstract:

In this research, NiO/ZnO heterojunction thin films were fabricated on a ITO substrate by a sol–gel technique. The as-prepared thin films were annealed at various temperatures. The effect of annealing temperature on structural, surface morphology and electrical properties of thin films was investigated by XRD, FESEM and I-V characteristic measurement. The XRD results revealed that NiO/ZnO thin film was polycrystalline and exhibited better crystallization when annealing temperature was increased. The current-voltage curve of all sample exhibited the diode behaviour.

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Periodical:

Key Engineering Materials (Volumes 675-676)

Pages:

225-228

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.675-676.225

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Online since:

January 2016

Authors:

Tanattha Rattana*, Sumetha Suwanboon, Chittra Kedkaew, Kumariga Wanichchang, Attapol Choeysuppaket

Keywords:

Annealing Temperature, NiO/ZnO Heterojunction Thin Films, Sol-Gel

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