Effect of Annealing Temperature on Electrochromic Properties of Tantalum Oxide Thin Films Deposited by DC Reactive Magnetron

Abstract:

The effect of annealing temperature on the electrochromic properties of the tantalum oxide (TaO) thin films deposited on silicon wafer (100) and indium tin oxide (ITO) substrates by dc reactive magnetron sputtering was investigated. The films were annealed at 300, 400 and 500 °C in vacuum for 2 hour. The crystalline structure, morphology, optical properties and electrochromic properties of as-deposited and annealed film were deduced by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry and ultraviolet–visible (UV–vis) spectrophotometery, respectively. The reflective index of TaO thin films increased with increasing annealing temperature. The result indicated that the annealed TaO thin film showed better performance than the as-deposited film.

• Periodical: Key Engineering Materials (Volumes 675-676)
• Pages: 221-224
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.675-676.221
• Online since: January 2016
• Authors: Sopanat Kongsriprapan, Kanyakorn Teanchai, Mati Horprathum, Chanunthorn Chananonnawathorn, Pitak Eiamchai, Wichian Siriprom*
• Keywords: Annealing, Electrochromic, Sputtering, Tantalum Oxide Thin Film

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