Development of Nanohole Array Patterned by Laser Interference Lithography Technique

N. Srisuai; Mati Horprathum; P. Eiamchai; P. Chindaudom; S. Boonruang; Somyod Denchitcharoen

doi:10.4028/www.scientific.net/KEM.675-676.41

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 675-676Development of Nanohole Array Patterned by Laser...

Development of Nanohole Array Patterned by Laser Interference Lithography Technique

Abstract:

Periodic nanohole pattern was created in spin-coated photoresist S1805 on Si substrates by Laser Interference Lithography (LIL). Wavelength of a laser source used in the optical system is 442 nm with the photon energy 2.80 eV. The system was set up to employ two laser beams from a beam splitter to generate interference pattern and expose to the photoresist. There are two parameters (incident angle and exposure time) which are determined due to affecting the ordering and feature of nanohole array. Therefore, the relation of these two parameters and actual dose were investigated and theoretically analyzed to optimize the resolution of LIL technique for nanoholes. The prepared samples after developing in the M26A for 5 sec were analyzed by field-emission scanning electron microscopy (FE-SEM). The results show that the pitch of the pattern is 440 nm and the smallest hole size is 190 nm The best feature is found for a laser fluence of 140 mJ/cm². This nanohole array patterned by LIL consists of periodic nanostructures for high density storage to fabricate various nanodevices.

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Periodical:

Key Engineering Materials (Volumes 675-676)

Pages:

41-44

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.675-676.41

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Online since:

January 2016

Authors:

N. Srisuai*, Mati Horprathum, P. Eiamchai, P. Chindaudom, S. Boonruang, Somyod Denchitcharoen

Keywords:

Exposure Time, Laser Interference Lithography, Nanohole Array, Photoresist

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