Effects of Withdrawal Speeds on Properties of ZnO Thin Films Prepared by Sol-Gel Immerse Technique

Abstract:

ZnO thin films have attractive applications in photoelectric device, due to their excellent chemical, electrical and optical properties. In this paper, ZnO thin films with good c-axis preferred orientation and high transmittance are prepared on glass sheets by sol-gel immerse technique. The effects of withdrawal speeds on the growth process of thin film crystal, film crystal orientation and the crystallinity, the optical performance were investigated by XRD, SEM and UV-Vis spectrophotometry. The results show that the thin films were composed of better hexagonal wurtzite crystals with the c-axis prepared orientation. The transmittance of prepared thin films is over 80% in the visible-near IR region from 600 nm - 800 nm. ZnO films have sharp and narrow diffraction peaks, which indicates that the materials exhibit high crystallinity. With the withdrawal speeds increasing, the grain size of ZnO thin films and the intensity for all diffraction peaks were increased gradually. The growth model is changed from the stratified structure into the island structure in the growth process. The transmittance of the thin films decrease in the visible wavelength region, with the withdrawal speeds increasing.

• Periodical: Key Engineering Materials (Volume 680)
• Pages: 124-128
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.680.124
• Online since: February 2016
• Authors: Chao Du, Yu Chun Zou, Zhi Qing Chen, Wen Kui Li, Shan Shan Luo*
• Keywords: C-Axis Preferred Orientation, Sol-Gel Technique, Withdrawal Speeds, ZnO Thin Film

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