Characterization and Vertical Elements Distribution of ZnGeP₂ Single Crystals

Abstract:

A large, crack-free ZnGeP₂ single crystal with size of Φ26 mm×70 mm was grown in a vertical three-zone tubular furnace by modified vertical Bridgman method, i.e. real-time temperature compensation technique with small temperature gradient in double-wall quartz ampoule. The as-grown single crystal was characterized by X-ray diffractometer (XRD), energy dispersive spectrometer (EDS), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). It was found that there is a face of (100) and its second-order XRD peaks were observed. The vertical elements distribution of the main part of the grown crystal has a stoichiometric ratio which is close to the ideal stoichiometry of 1:1:2. The IR transmittance of a sample of 2.5 mm thickness is above 58% in the range from 3500 to 800 cm^-1. All these results demonstrate that the quality of the ZnGeP₂ single crystal grown by the modified method is good, and could be used in the preparation of devices.

• Periodical: Key Engineering Materials (Volume 680)
• Pages: 493-497
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.680.493
• Online since: February 2016
• Authors: Hu Xie, Bei Jun Zhao*, Shi Fu Zhu, Bao Jun Chen, Zhi Yu He, Deng Hui Yang, Wei Huang, Wei Liu, Zhang Rui Zhao
• Keywords: Characterization, Crystal Growth, Elements Distribution, Nonlinear Optical Crystal, Zinc Germanium Diphosphide

References

[1] Y. Shimony, O. Raz, G. Kimmel, M.P. Dariel, Opt. Mater. 13 (1999) 101-109.

[2] M.D. Lind, R.W. Grant, J. Chem. Phys. 58 (1973) 357-362.

[3] G.A. Verozubova, A.I. Gribenyukov, Crystallography Report. 53 (2008) 158-163.

[4] J.L. Shay, J.H. Wernick, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications, Pergamon Press, New York, (1975).

DOI: 10.1016/b978-0-08-017883-7.50006-8

[5] K.T. Zawilski, P.G. Schunemann, S.D. Setzler, et al., J. Crystal Growth. 310 (2008) 1891-1896.

[6] E. Buehler, J.H. Wernick, J.D. Wiley, J. Electron. Mater. 2 (1973) 445-454.

[7] G.A. Verozubova, A.I. Gribenyukov, V.V. Korotkova, et al., J. Crystal Growth, 237-239 (2002) 2000-(2004).

DOI: 10.1016/s0022-0248(01)02303-x

[8] G.A. Verozubova, A.I. Gribenyukov, V.V. Korokova, et al., Mater. Sci. Engi. B. 48 (1997) 191-197.

[9] Y. Shimony, G. Kimmel, O. Raz, M.P. Dariel, J. Crystal Growth 198/199 (1999) 583-587.

DOI: 10.1016/s0022-0248(98)01232-9

[10] H.M. Hobgood, T. Henningsen, R.N. Thomas, et al., J. Appl. Phys. 73 (8) (1993) 4030-4037.

[11] G.C. Xing, K.J. Bachmann, J.B. Posthill, Appl. Phys. Lett. 56 (3) (1990) 271-273.

[12] T.Y. Wang, R. Sivakumara, D.K. Rai, et al., , J. Chin. Inst. Chem. Eng. 39 (2008) 385-387.