Design and Simulation of Top Illuminated InGaAs PIN Photodetector for Millimeter-Wave Applications

Abstract:

This paper proposed a newdesign of top illuminated PIN photodetector at 1550nm wavelength for millimeter-wave applications. Device topology, structure and fabrication methods were considered in designing the photodetector. The combination material of InP/InGaAsP/InGaAs/InGaAsP was used in designing the top illuminated PIN photodetector. This PIN photodetector was targeted to produce at least 0.60A/W of responsivity with a dark current of <100nA. The design, layout, and electrical characteristics of this photodetector were carried out using SILVACO TCAD tool. The simulated results show higher responsivity value than targeted, device frequency response of -3dBm at 40GHz with targeted dark current achievable within the wavelength absorption bands specification. The results are compared with similar designs from other reported works.

• Periodical: Key Engineering Materials (Volume 744)
• Pages: 422-427
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.744.422
• Online since: July 2017
• Authors: N.A. Ngah*, Amiza Rasmi, Ashaari Yusof, Norman Fadhil Idham Muhammad, Ahmad Ismat Abd Rahim, Asban Dolah, Mohd Haniff Ibrahim
• Keywords: 1550nm Wavelength, Photodetector, Top Illuminated

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