Acquiring MIS Structures Based on Bа0.8Sr0.2TiО3 Ferroelectric Films and their Properties

Mikhail S. Afanasyev; Asaf Nabiev; Galina Chucheva; Dzhahangir Guseinov

doi:10.4028/www.scientific.net/KEM.781.20

Paper Titles

Preface

Computer Simulation of Vacancy Clusters Distribution by Depth in Molybdenum Irradiated by Alpha Particles
p.3

Technological Features of the Thick Tin Film Deposition by with Magnetron Sputtering Form Liquid-Phase Target
p.8

Radiation Defects in HCC Materials at Atomic Spatial Level
p.14

Acquiring MIS Structures Based on Bа_0.8Sr_0.2TiО₃Ferroelectric Films and their Properties
p.20

Dose Dependences of the Mechanical Strength of Polymer Materials
p.25

Investigation of Thermal Explosion Formation in Heterogeneous Systems
p.30

Effect of Temperature on the Magnetic Permeability of Hexagonal Ferrites
p.36

Influence of Morphology of the Press Powder Particles and Thermal Annealing on the Structure and Microhardness of Palladium Obtained by Solid-Phase Sintering
p.41

HomeKey Engineering MaterialsKey Engineering Materials Vol. 781Acquiring MIS Structures Based on Bа0.8Sr0.2TiО3...

Acquiring MIS Structures Based on Bа_0.8Sr_0.2TiО₃Ferroelectric Films and their Properties

Abstract:

The paper considers formation of Ba_0.8Sr_0.2TiO₃ferroelectric films of MIS structures on silicon wafer with magnetron sputtering in HF discharge of the initial target material from the polycrystal ferroelectric in the oxygen atmosphere. Dielectric and volt-farad characteristics of MIS structures have been explored, depending on formation modes of Ba_0.8Sr_0.2TiO₃ ferroelectric films. The authors determined technological modes of film deposition for acquiring MIS structures with the best electrophysical properties.

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Periodical:

Key Engineering Materials (Volume 781)

Pages:

20-24

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.781.20

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Online since:

September 2018

Authors:

Mikhail S. Afanasyev*, Asaf Nabiev, Galina Chucheva, Dzhahangir Guseinov

Keywords:

Ferroelectric Film, HF Discharge, Metal-Insulator-Semiconductor (MIS) Structure, Volt-Farad Characteristics

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