Research on Efficiency Improvement of UPS Based on Silicon Carbide MOSFET

Abstract:

In order to avoid the loss caused by sudden power failure or loss, UPS is very necessary.As the core part of UPS, the efficiency of DC-DC converter improvement has been a long-term research direction in the industry.Switch tube loss are the main factors influencing the DCDC converter efficiency, SI power component is affected by its material, its performance is difficult to further improve, seriously affect the efficiency of the DC-DC converter, SiC semiconductor with high band gap width, the advantages of high heat conductivity and high electric breakdown strength in recent years become a hot research direction at home and abroad, and silicon carbide material improves the device the possibility of high frequency, miniaturization and efficiency.Compared with Si power devices, the advantages of SiC power devices are higher voltage and temperature resistance, higher operating frequency and lower switching losses.

• Periodical: Key Engineering Materials (Volume 842)
• Pages: 257-261
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.842.257
• Online since: May 2020
• Authors: Peng Zhang*, Xiu Ying Ren, Hong Da Zhang, De Wen Zhang, See Lan, Si Wei Han, Meng Chun Wang
• Keywords: Silicon Carbide Transistor, Switching Loss, Uninterruptible Power Supply

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