Magneto-Transport Properties in LaMnO3 Thin Films on a-SiO2 Substrates Produced by Metal Organic Decomposition Method

Hiromi Kobori; Thoru Kitamura; A. Yamasaki; T. Taniguchi; T. Shimizu

doi:10.4028/www.scientific.net/KEM.853.63

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 853Magneto-Transport Properties in LaMnO3 Thin Films...

Magneto-Transport Properties in LaMnO₃ Thin Films on a-SiO₂ Substrates Produced by Metal Organic Decomposition Method

Abstract:

We have studied the magneto-transport properties in LMO thin films on a-SiO₂ substrates produced by the metal organic decomposition (MOD) method. LMO thin films have been prepared by the MOD method in the 100 % O₂ gas atmosphere on different heat treatment conditions. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O₂ gas atmosphere by use of the MOD method shows the ferromagnetic metal properties for suitable heat treatment conditions. We consider that the excess of O^2- ions in LMO thin films produced in the 100 % O₂ gas atmosphere induces the strong hole self-doping into those and changes to ferromagnetic metal. The quantity of excess O^2- ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. We have obtained the coercive forces from the magnetic field dependence of magnetoresistance. Based on the temperature dependence of the coercive forces, we have estimated the Curie temperature of LMO thin films.

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Key Engineering Materials (Volume 853)

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63-67

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https://doi.org/10.4028/www.scientific.net/KEM.853.63

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Online since:

July 2020

Authors:

Hiromi Kobori*, Thoru Kitamura, A. Yamasaki, T. Taniguchi, T. Shimizu

Keywords:

Ferromagnetic Metal, Hole Self-Doping, LaMnO₃, Magneto-Transport Properties, Metal Organic Decomposition, Thin Film

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