Impacts of Wafer Doping Type on Structural and Optical Properties of Black Silicon Fabricated by Metal-Assisted Chemical Etching

Muhiddin Ahmad Sheriff; Auwal Abdulkadir; Md. Roslan Hashim; Mohd Zamir Pakhuruddin

doi:10.4028/p-zk13ka

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 946Impacts of Wafer Doping Type on Structural and...

Impacts of Wafer Doping Type on Structural and Optical Properties of Black Silicon Fabricated by Metal-Assisted Chemical Etching

Abstract:

In this work, the impacts of wafer doping type on structural and optical properties of black silicon (b-Si) fabricated by metal-assisted chemical etching (MACE) process are investigated. P-type and n-type mono-crystalline silicon (mono c-Si) wafers are etched in an aqueous solution of hydrofluoric acid (HF), silver nitrate (AgNO₃) and deionised water (DI H₂O) at room temperature and various durations from 5-20 minutes. Surface morphological results demonstrate the formation of b-Si nanowires (NWs) with average lengths of 0.4-0.8 μm for p-type wafers and 0.8-3.0 μm for n-type wafers. The higher length of the NWs for the n-type wafers is due to the minority charge carriers, which lead to a higher etching rate during the MACE process. Within the 300-1100 nm wavelength region, weighted average reflection (WAR) for the p-type and n-type wafers decreases to 6.6% and 6.4%, respectively, after 20 minutes of etching. The corresponding improvement in broadband light absorption results in maximum potential short-circuit current density (J_{sc (max)}) of 38.2 and 38.8 mA/cm² for the p-type and n-type b-Si, respectively, which is an of enhancement of 39.9% and 42.1% when compared to the J_{sc (max)} of planar c-Si reference.

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Periodical:

Key Engineering Materials (Volume 946)

Pages:

73-79

DOI:

https://doi.org/10.4028/p-zk13ka

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Online since:

May 2023

Authors:

Muhiddin Ahmad Sheriff, Auwal Abdulkadir, Md. Roslan Hashim, Mohd Zamir Pakhuruddin*

Keywords:

Absorption, Black Silicon, Metal-Assisted Chemical Etching, Solar Cell

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