Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth

Abstract:

In this project, the surface structure of III-V semiconductor, GaAs, was altered to enhance the optical and electronic properties of the semiconductor. This project involved the designing and fabrication of non-porous and porous GaAs structures using SILVACO TCAD tools. The porous GaAs with different pore depth were designed and simulated to investigate the effect of pore depth on the optical and electrical properties of GaAs semiconductor. The pore depth of porous GaAs structure was varied with 2, 4, 6 and 8 μm. The porous GaAs structures were then tested for the metal-semiconductor-metal (MSM) photodetector device application. The non-porous and porous GaAs MSM photodetectors were compared systematically through current-voltage (I-V) characteristics, current gain, and spectral response. The result showed that the porous GaAs MSM photodetector has better performance in terms of electrical and optical properties than the non-porous photodetector. Amongst the MSM GaAs photodetectors, the porous GaAs photodetector with pore depth of 6 μm obtained the highest current gain value of 3.22. While for optical properties, the spectral response showed the current intensity of 11.370 µA which was recorded at the peak wavelength of 880 nm. Therefore, porous GaAs showed good potential and can be used for optoelectronic device applications such as MSM photodetector.

• Periodical: Key Engineering Materials (Volume 946)
• Pages: 87-92
• DOI: https://doi.org/10.4028/p-v731ho
• Online since: May 2023
• Authors: Mohamad Rafiudin Ramle, Rosfariza Radzali*, Alhan Farhanah Abd Rahim, Ainorkhilah Mahmood, Aslina Abu Bakar, Anis Nabilah Mohd Daud, Mohd Hanapiah Abdullah
• Keywords: Etching, Optoelectronic Device, Porous III-V, SILVACO TCAD, Surface Structure

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