Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications

Abstract:

In this paper, a suitable process technology is employed to fabricate a new open gate silicon carbide-based junction field-effect transistor (OG-4H-SiC-JFET) intended to be used for all types of biochemical sensing applications. The main focus is dedicated to the fabrication steps and specifically the plasma etching of the SiC as it is the key step to pattern the device components. All necessary I-V characteristics (I_DS-V_DS and I_DS-V_GS) have been derived and show acceptable electrical performance. Furthermore, the electrical characteristics of the OG-4H-SiC JFET were simulated using 3D Silvaco ATLAS and are in line with the experimental electrical characteristics. The efficacity and simplicity of the process described in this paper is the first step for future development of biochemical sensors based on SiC-FETs.

• Periodical: Key Engineering Materials (Volume 946)
• Pages: 111-118
• DOI: https://doi.org/10.4028/p-03m3ss
• Online since: May 2023
• Authors: Olfa Karker*, Konstantinos Zekentes, Nikolaos Makris, Valerie Stambouli, Edwige Bano
• Keywords: 4H-SiC, Biosensor, Chemical Sensor, CMOS

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