Influence of Working Temperature on the InSb/Si Heterojunction Photodetectors Performance

Abstract:

Traditional silicon-based photodetectors are limited by the band gap of silicon, which results in a limited working wavelength range. In this report, due to the excellent properties of Indium Antimonide, the InSb/Si heterojunction photodetectors are fabricated. Under ambient temperature of 280K, as-prepared photodetectors show a specific detectivity of 9.310¹¹ cm Hz^1/2/W, responsivity of 54 mA/W, on/off ratio of 510⁴ under the laser irradiation of 635 nm. In order to explore the influence of working temperature on device performance, the photoresponse at different temperatures was tested. This report proved that as the working temperature increases, the responsivity and specific detectivity of the device decrease, and the performance of the device becomes worse.

• Periodical: Materials Science Forum (Volume 1001)
• Pages: 104-109
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1001.104
• Online since: July 2020
• Authors: Xiao Xia Li, Kai Zhou, Xin Hong, Wen Lin Feng, Da Peng Wei*
• Keywords: Operating Temperature, Semiconductor Material, Silicon-Based Photodetector

References

[1] Ghioni M., Gulinatti A., Rech I., Zappa F., Cova S, Progress in Silicon Single-Photon Avalanche Diodes, IEEE Journal of Selected Topics in Quantum Electronics, 2007, 13(4): 852-862.

DOI: 10.1109/jstqe.2007.902088

[2] Gudiksen, M. S., Lauhon, L. J., Wang, J., Smith, D. C., Lieber, C. M, Growth of nanowire superlattice structures for nanoscale photonics and electronics, Nature, 2002, 415(6872): 617.

DOI: 10.1038/415617a

[3] Jin B, Huang P, Zhang Q, et al, Self-Limited Epitaxial Growth of Ultrathin Nonlayered CdS Flakes for High-Performance Photodetectors, Advanced Functional Materials, 2018, 28(20): 1800181.

DOI: 10.1002/adfm.201800181

[4] Mcdonald S.A., Konstantatos G., Zhang S., Cyr P.W., Klem E.J., Levina L., et al, Solution-processed PbS quantum dot infrared photodetectors and photovoltaics , Nature Materials, 2005, 4(2): 138.

DOI: 10.1038/nmat1299

[5] Rothman J, Characterization of midwave infrared InSb avalanche photodiode, Journal of Applied Physics, 2015(117): 244502.

DOI: 10.1063/1.4922977

[6] D'Costa V R, Tan K H, Jia B W, et al, Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy, Journal of Applied Physics, 2015, 117(22):2618.

DOI: 10.1063/1.4922586

[7] K. Shimoida, H. Tsuchiya, Y. Kamakura, et al, Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit, Applied Physics Express, 2013, 6(3):034301.

DOI: 10.7567/apex.6.034301

[8] Singh A, Srivastav V, Pal R, HgCdTe avalanche photodiodes: A review, Opt Laser Technol, 2011, 43(7): 1358–1370.

DOI: 10.1016/j.optlastec.2011.03.009

[9] H. Nagata, H. Homma, S. Yamaguchi, Improvement of Electrical and Thermoelectric Properties of MOCVD-Grown InSb Thin Films Using Si-Doped Interfacial Layer, ECS Transactions, 2010, 25(33): 81-86.

DOI: 10.1149/1.3334794

[10] D.T.J. Hurle, A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors, Journal of Applied Physics, 2010, 107(12):121301.

DOI: 10.1063/1.3386412

[11] Liu T S, Peretti E A, The indium-antimony system, Trans. Am. Soc. Met., 1951 ,44:539-548.