Temperature Dependent Carrier Transport in Hydrogenated Amorphous Semiconductors for Thin Film Memristive Applications

Abstract:

This paper demonstrates the transport of electron and hole carriers in two distinct hydrogenated amorphous semiconductor materials at different temperatures. Compared to crystalline materials, the amorphous semiconductors differ structurally, optically and electrically, hence the nature of carrier transport through such amorphous materials differ. Materials like hydrogenated amorphous silicon and amorphous IGZO have been used for the study of temperature dependent carrier transport in this paper. Simulation results have been presented to show the variation of free electron and hole concentration, trapped electron and hole concentration with energy at 300K for both the materials. The change in mobility with a change in the Fermi level has been plotted for different temperatures. The effect of temperature on Brownian motion mobility of electrons and holes in hydrogenated amorphous silicon and amorphous IGZO has been demonstrated towards the end of this paper.

• Periodical: Materials Science Forum (Volume 1048)
• Pages: 182-188
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1048.182
• Online since: January 2022
• Authors: Mayank Chakraverty, V.N. Ramakrishnan*
• Keywords: Amorphous Semiconductors, Brownian Motion Mobility, Crystalline, Free Electron Concentration, Free Hole Concentration, Hydrogenation, IGZO, Silicon, Trapped Electron Concentration, Trapped Hole Concentration

References

[1] Y.M. Niquet, C. Delerue, G. Allan, and M. Lannoo, Method for tight-binding parameterization: application to silicon nanostructures, Phys. Rev. 62, 5109–5116 (2000).

DOI: 10.1103/physrevb.62.5109

[2] G. Grosso and C. Piermarocchi, Tight-binding model and interaction scaling laws for silicon and germanium, Phys. Rev. B 51, 16772–16777 (1995).

DOI: 10.1103/physrevb.51.16772

[3] F.E. Doany and D. E. Grischkowsky, Measurement of ultraf ast hot-carrier relaxation in silicon by thin film enhanced, time-resolved reflectivity, Appl. Phys. Lett. 52, 36–38 (1988).

DOI: 10.1063/1.99309

[4] Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen, SnO/β-Ga2O3 vertical pn heterojunction diodes, Applied Physics Letters, 117:25, 252106 (2020).

DOI: 10.1063/5.0031442

[5] Kate M. Adkison, Shun-Li Shang, Brandon J. Bocklund, Detlef Klimm, Darrell G. Schlom, Zi-Kui Liu, Suitability of binary oxides for molecular-beam epitaxy source materials: A comprehensive thermodynamic analysis, APL Materials 8:8, 081110 (2020).

DOI: 10.1063/5.0013159

[6] C. Tserbak, H. M. Polatoglou, and G. Theodorou, Unified approach to the electronic structure of strained Si/Ge superlattices, Phys. Rev. B 47, 7104–7124 (1993).

DOI: 10.1103/physrevb.47.7104

[7] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor, Science 2003, 300, 1269-1272.

DOI: 10.1126/science.1083212

[8] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors, Nature 2004, 432, 488–492.

DOI: 10.1038/nature03090

[9] J. Sheng, H. Jeong, K. Han, T. Hong, J. Park, Review of recent advances in flexible oxide semiconductor thin-film transistors, J. Inf. Disp. 2017, 18, 159–172.

DOI: 10.1080/15980316.2017.1385544

[10] E. Fortunato, P. Barquinha, R. Martins, Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances, Adv. Mater. 2012, 24, 2945–2986.

DOI: 10.1002/adma.201103228

[11] X. Yu, T. Marks, A. Facchetti, Metal oxides for optoelectronic applications, Nat. Mater. 2016, 15, 383–396.

DOI: 10.1038/nmat4599

[12] A. Liu, H. Zhu, H. Sun, Y. Xu, Y. Noh, Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits. Adv. Mater. 2018, 30, 1–39.

DOI: 10.1002/adma.201706364

[13] G. N. Koskowich, M. Soma, and R. B. Darling, Near-infrared free-carrier optical absorption in silicon: effect of first-order phonon-assisted scattering in a non-parabolic conduction band, Phys. Rev. B 41, 2944–2947 (1990).

DOI: 10.1103/physrevb.41.2944

[14] C. Jacoboni, R. Minder, and G. Majni, Effects of band nonparabolocity on electron drift velocity in silicon above room temperature, J. Chem. Phys. Solids 36, 1129–1133 (1975).

DOI: 10.1016/0022-3697(75)90055-4

[15] T. Sjodin, H. Petek, and H.-L. Dai, Ultrafast carrier dynamics in silicon: a two-color transient-reflection grating study on a (111) surface, Phys. Rev. Lett. 81, 5664–5667 (1998).

DOI: 10.1103/physrevlett.81.5664

[16] K.A. Stewart, B.-S. Yeh, and J.F. Wager, Amorphous semiconductor mobility limits, J. Non-Cryst. Solids (2015), http://dx.doi.org/10.1016/j.jnoncrysol.2015.10.005.

[17] Kevin Stewart (2016), Amorphous Semiconductor Transport Simulator,, https://nanohub.org/ resources/asts. (.

[18] Tiwari, D.L., Sivasankaran, K. NDR Behavior of a Phosphorous-Doped Double-Gate MoS2 Armchair Nanoribbon Field Effect Transistor. Journal of Elec Materi 49, 551–558 (2020). https://doi.org/10.1007/s11664-019-07806-2.

DOI: 10.1007/s11664-019-07806-2

[19] Tiwari, D. L.; Sivasankaran, K. Impact of substrate on performance of band gap engineered graphene field effect transistor. Superlattices Microstruct. 2018, 113, 244– 254,.

DOI: 10.1016/j.spmi.2017.11.004

[20] Durgesh LaxmanTiwari, K.Sivasankaran , Impact of carrier concentration and bandgap on the performance of double gate GNR-FET, Volume 130, June 2019, Pages 38-49, https://doi.org/10.1016/j.spmi.2019.04.019.

DOI: 10.1016/j.spmi.2019.04.019

[21] Durgesh LaxmanTiwari, K.Sivasankaran, Nitrogen-doped NDR behavior of double gate graphene field effect transistor, Volume 136, December 2019, 106308, https://doi.org/10.1016/ j.spmi.2019.106308.

DOI: 10.1016/j.spmi.2019.106308