Sol-Gel Processed ZrO2 Based Forming-Free Resistive Switching Memory Devices

K.M. Shafi; K. Muhammed Shibu; N.K. Sulfikarali; K.P. Biju

doi:10.4028/www.scientific.net/MSF.1048.198

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HomeMaterials Science ForumMaterials Science Forum Vol. 1048Sol-Gel Processed ZrO2 Based Forming-Free...

Sol-Gel Processed ZrO₂ Based Forming-Free Resistive Switching Memory Devices

Abstract:

In this work, we fabricated ZrO₂based resistive random access memory by sol-gel spin coating technique and investigated its structural, optical and resistive switching properties. The X-ray diffraction pattern revealed that 400 °C annealed ZrO₂ thin film has tetragonal structure. The optical band gap value of ZrO₂ thin film obtained was 5.51 eV. The resistive switching behaviour of W/ZrO₂/ITO capacitor like structure was studied. It was found that no initial electroforming process required for the device. The fabricated devices show a self-compliance bipolar resistive switching behaviour and have high on off ratio (>10²). Our result suggests that solution processed ZrO₂ has great potential to develop transparent and flexible resistive random access memory devices.

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Materials Science Forum (Volume 1048)

Pages:

198-202

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1048.198

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Online since:

January 2022

Authors:

K.M. Shafi, K. Muhammed Shibu, N.K. Sulfikarali, K.P. Biju*

Keywords:

Memory, Resistive Switching, ZrO₂

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