Paper Titles

Study of Deformed Si and Ge by Positron Lifetime Measurements
p.1101

Positron Studies of Annealing and Precipitation in Quenched Al-Sc(0.003-6 at %) Alloys
p.1105

Positron Lifetime Studies of Decomposition in Al-Li and Al-Li-(Cu, Mg or Sc) Alloys
p.1109

Positron Annihilation in Quasicrystalline Alloy Al₆₅Cu₂₀Fe₁₅
p.1113

On the Behaviour of Positrons in Semiconductors in Presence of External Electric Field Perturbation
p.1117

Effect of On-Line Light Irradiation on Positron Lifetimes and Their Relevance to the Defects in Semiconductors
p.1121

Positron Annihilation Lifetime Measurement of Electron-Irradiated Fe-Cr Alloys
p.1125

Positron Annihilation Measurements in the YBa₂Cu₃Cd_xO_y System
p.1129

The Investigation of Creep in 12Cr1MoV Steel by Positron Annihilation
p.1133

HomeMaterials Science ForumMaterials Science Forum Vols. 105-110On the Behaviour of Positrons in Semiconductors in...

On the Behaviour of Positrons in Semiconductors in Presence of External Electric Field Perturbation

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1117-1120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1117

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Online since:

January 1992

Authors:

N.M. Kulkarni, S. Deuskar, A.D. Shaligram

Keywords:

Defect, Electric Field Perturbation, Semiconductor

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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