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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Point Defects in GaP Studied by Correlated...

Point Defects in GaP Studied by Correlated Positron Lifetime and Hall Measurements

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1173-1176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1173

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Cite this paper

Online since:

January 1992

Authors:

A. Polity, R. Krause

Keywords:

Compound Semiconductor, GaP, Ionization Level of Vacancies, Specific Positron Trapping Rate

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Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

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