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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Thermal Evolution of Defect Profiles in...

Thermal Evolution of Defect Profiles in H-Implanted Silicon Studied by Slow Positrons

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1367-1370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1367

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Online since:

January 1992

Authors:

Roberto S. Brusa, Marco Duarte Naia, A. Dupasquier, G. Ottaviani, R. Tonini, Antonio Zecca

Keywords:

Defect, Ion Implantation, Silicon, Slow Positrons

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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