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The Effect of Annealing Unimplanted and Krypton Implanted Uranium Dioxide Using Positrons
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Annealing Effects at the Near-Surface Region of Gallium Arsenide
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The Study of Se- and Si-Implanted GaAs by Slow Positrons
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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Annealing Effects at the Near-Surface Region of...

Annealing Effects at the Near-Surface Region of Gallium Arsenide

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1383-1386

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1383

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Online since:

January 1992

Authors:

Hugh E. Evans, D.L. Smith, P.C. Rice-Evans, G.A. Gledhill, A.M. Moore

Keywords:

Annealing, Defect, Diffusion Model, GaAs Antisite, Gallium Arsenide, Infra-Red Measurements, Lineshape Parameter, Positron Beam, Site-Switching

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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