The Study of Se- and Si-Implanted GaAs by Slow Positrons

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Periodical:

Materials Science Forum (Volumes 105-110)

Edited by:

Zs. Kajcsos and Cs. Szeles

Pages:

1387-1390

DOI:

10.4028/www.scientific.net/MSF.105-110.1387

Citation:

S. Fujii et al., "The Study of Se- and Si-Implanted GaAs by Slow Positrons", Materials Science Forum, Vols. 105-110, pp. 1387-1390, 1992

Online since:

January 1992

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$35.00

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