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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110The Study of Se- and Si-Implanted GaAs by Slow...

The Study of Se- and Si-Implanted GaAs by Slow Positrons

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1387-1390

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1387

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Online since:

January 1992

Authors:

S. Fujii, S. Shikata, Long Wei, Shoichiro Tanigawa

Keywords:

GaAs, Ion Implantation, Monoenergetic Positrons, Se in GaAs, Vacancy Cluster

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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