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Slow Positron Studies of Hydrogen Interaction with SiO₂/Si(100) Interfaces
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Positron Mobility and Trapping in Semiconductors
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The Electronic Structure of the Heavy-Fermion System URu₂Si₂
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Path Integral Formulation of Positron and Positronium Lifetimes in Fluids
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"Squeezed" Positronium in Condensed Matter
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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Positron Mobility and Trapping in Semiconductors

Positron Mobility and Trapping in Semiconductors

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

369-376

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.369

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Online since:

January 1992

Authors:

J. Mäkinen

Keywords:

Mobility in Si, Trapping in Si, Vacancy Relaxation

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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