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Positron Annihilation at Clean Metallic Surfaces
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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Vacancies in II-VI- and IV-VI Compound...

Vacancies in II-VI- and IV-VI Compound Semiconductors Studied by Positron Lifetime Spectroscopy

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

333-340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.333

Citation:

Cite this paper

Online since:

January 1992

Authors:

R. Krause, M. Neubert, Th. Drost, W. Hörstel, A. Polity, F.M. Kiessling, U. Paitz, V.P. Zlomanov, S. Mäkinen

Keywords:

CdHgTe, Compound Semiconductor, PbSe, Specific Positron Trapping Rates

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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