An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor

Abstract:

This paper introduced an accurate empirical model for the thermal resistance of a single-finger AlGaN-GaN high electron mobility transistor (HEMT) on three different substrates including Sapphire, SiC and Si. The model reckons the constant thermal conductivity of GaN and substrate, thickness of host substrate layers, gate length (Lg) and width (Wg). The model plausibility is verified by comparing it with DC channel temperature measurement method and charge controlled based device modeling which agrees very favorable observation of the model data. Having nimble expression for the channel temperature is of inordinate importance in the field of designers of power device and monolithic microwave integrated circuits. Proposed model gives a variety of inquiries that would be impossible or impractical to do using time-consuming numerical simulations.

• Periodical: Materials Science Forum (Volume 1074)
• Pages: 125-131
• DOI: https://doi.org/10.4028/p-ajv0ev
• Online since: November 2022
• Authors: Surajit Chakraborty*, Ju Won Shin, Walid Amir, Ki Yong Shin, Tae Woo Kim
• Keywords: AlGaN, Channel Temperature, Device Modeling, GaN, Sapphire, Self-Heating Effect, Si Substrate, SiC, Thermal Resistance (R_th)

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