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HomeMaterials Science ForumMaterials Science Forum Vol. 1093A Method to Simulate Extrinsic Light Excitation of...

A Method to Simulate Extrinsic Light Excitation of Vanadium-Compensated 6H-SiC

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Abstract:

Extrinsic light excitation has much lower absorption coefficient compared to intrinsic light excitation, which can better utilize the “bulk” of semiconductor rather than a thin surface as the depth of light absorption is much larger, making it suitable for higher power applications. However, commercial technology computer aided design (TCAD) software has not developed a model for extrinsic light excitation. Therefore, we construct a model of Vanadium-compensated semi-insulating (VCSI) 6H-SiC photoconductive semiconductor switch (PCSS) illuminated with sub-bandgap light, and realize the process of light absorption at V deep acceptor level in Silvaco TCAD simulation by modifying the electron emission rate. Then, we simulate the transient response of 6H-SiC triggered by a nanosecond light pulse and discuss the feasibility of this method.

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Periodical:

Materials Science Forum (Volume 1093)

Pages:

87-94

DOI:

https://doi.org/10.4028/p-vn7SRK

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Online since:

July 2023

Authors:

Wen Tao Fu, Han Wu Yang*, Xu Chu, Lang Ning Wang, Tao Xun

Keywords:

Extrinsic Light Excitation, PCSS, TCAD Simulation, VCSI 6H-SiC

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© 2023 Trans Tech Publications Ltd. All Rights Reserved

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