A Benchtop X-Ray Diffractometer as a Tool for Thin Film Characterization

Abstract:

An application of compact benchtop X-ray diffractometer for investigation of thin film semiconductor structures was demonstrated. A depth-dependent qualitative phase analysis of multilayer polycrystalline CuInGaSe₂-based solar cell structure was performed. The independent goniometer allowed determination of residual stress values in the molybdenum layer of the solar cell. Grazing-incidence X-ray diffractometry was used to estimate polycrystallinity degree of AlN layers grown by molecular beam epitaxy and correlate it with the growth temperature. X-ray reflectometry measurement were also performed for nucleation AlN layer.

• Periodical: Materials Science Forum (Volume 1141)
• Pages: 111-117
• DOI: https://doi.org/10.4028/p-1Dvv4M
• Online since: December 2024
• Authors: Mikalai Rzheutski, Vasilii Cherkesov, Dzmitry Kabanau, Evgenii Lutsenko, Liliya Bui*
• Keywords: Benchtop X-Ray Diffractometer, Grazing-Incidence XRD, Reflectometry, Semiconductor Heterostructures, Sin2ψ Method

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