Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys
p.105
p.105
Isotopic Dependence of Near-Band-Gap Luminescence from Germanium
p.111
p.111
Neutron Transmutation Doping of Isotopically Controlled Ge
p.117
p.117
Zeeman and Landau Spectroscopy of Group III Acceptors in Germanium
p.123
p.123
Zeeman and Piezo-Zeeman Spectroscopy of Zinc and Copper Acceptors in Germanium
p.129
p.129
Hydrogen-Induced Isotope Shift of Dipole Transitions of Shallow Donors in Silicon
p.135
p.135
The Structure of a Metastable Luminescent Defect in Sulphur-Doped Silicon
p.141
p.141
Iron-, Manganese- and Chromium-Indium Pairs in Silicon
p.147
p.147
Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition
p.153
p.153
Zeeman and Piezo-Zeeman Spectroscopy of Zinc and Copper Acceptors in Germanium
Abstract:
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Periodical:
Materials Science Forum (Volumes 117-118)
Pages:
129-134
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Online since:
January 1993
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© 1993 Trans Tech Publications Ltd. All Rights Reserved
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