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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Neutron Transmutation Doping of Isotopically...

Neutron Transmutation Doping of Isotopically Controlled Ge

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

117-122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.117

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Online since:

January 1993

Authors:

K. Itoh, W.L. Hansen, Eugene E. Haller, J.W. Farmer, V.I. Ozhogin

Keywords:

Ge, Isotope, Neutron Transmutation Doping (NTD)

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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