Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
p.75
p.75
Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon
p.81
p.81
Strong Electron Correlation in Si-OV and Si-V - An Ab Initio Cluster Study -
p.87
p.87
Spherical Model of Shallow Acceptor Resonant P1/2 States in Cubic Semiconductors
p.93
p.93
Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells
p.99
p.99
Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys
p.105
p.105
Isotopic Dependence of Near-Band-Gap Luminescence from Germanium
p.111
p.111
Neutron Transmutation Doping of Isotopically Controlled Ge
p.117
p.117
Zeeman and Landau Spectroscopy of Group III Acceptors in Germanium
p.123
p.123
Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells
Abstract:
Info:
Periodical:
Materials Science Forum (Volumes 117-118)
Main Theme:
Edited by:
Tsunemasa Taguchi
Pages:
99-104
Citation:
Y. Shinozuka, "Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells ", Materials Science Forum, Vols. 117-118, pp. 99-104, 1993
Online since:
January 1993
Authors:
Price:
$38.00
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