Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
p.67
p.67
Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
p.75
p.75
Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon
p.81
p.81
Strong Electron Correlation in Si-OV and Si-V - An Ab Initio Cluster Study -
p.87
p.87
Spherical Model of Shallow Acceptor Resonant P1/2 States in Cubic Semiconductors
p.93
p.93
Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells
p.99
p.99
Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys
p.105
p.105
Isotopic Dependence of Near-Band-Gap Luminescence from Germanium
p.111
p.111
Neutron Transmutation Doping of Isotopically Controlled Ge
p.117
p.117
Spherical Model of Shallow Acceptor Resonant P1/2 States in Cubic Semiconductors
Abstract:
Info:
Periodical:
Materials Science Forum (Volumes 117-118)
Main Theme:
Edited by:
Tsunemasa Taguchi
Pages:
93-98
Citation:
R. Buczko "Spherical Model of Shallow Acceptor Resonant P1/2 States in Cubic Semiconductors ", Materials Science Forum, Vols. 117-118, pp. 93-98, 1993
Online since:
January 1993
Authors:
Keywords:
Price:
$38.00
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