Extremely Heavy Doping of Carbon in GaAs and InGaAs
p.37
p.37
Carbon and Silicon Impurity Centers in GaAs
p.45
p.45
Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
p.53
p.53
Self-Compensation in P, As, and N Doped ZnSe
p.61
p.61
Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
p.67
p.67
Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
p.75
p.75
Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon
p.81
p.81
Strong Electron Correlation in Si-OV and Si-V - An Ab Initio Cluster Study -
p.87
p.87
Spherical Model of Shallow Acceptor Resonant P1/2 States in Cubic Semiconductors
p.93
p.93
Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
Abstract:
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Periodical:
Materials Science Forum (Volumes 117-118)
Pages:
67-74
Citation:
Online since:
January 1993
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© 1993 Trans Tech Publications Ltd. All Rights Reserved
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