Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

67-74

DOI:

10.4028/www.scientific.net/MSF.117-118.67

Citation:

J.L. Lee "Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties ", Materials Science Forum, Vols. 117-118, pp. 67-74, 1993

Online since:

January 1993

Authors:

Keywords:

Export:

Price:

$35.00

In order to see related information, you need to Login.