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Extremely Heavy Doping of Carbon in GaAs and InGaAs
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Carbon and Silicon Impurity Centers in GaAs
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Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
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Self-Compensation in P, As, and N Doped ZnSe
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Extremely Heavy Doping of Carbon in GaAs and...

Extremely Heavy Doping of Carbon in GaAs and InGaAs

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

37-44

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.37

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Online since:

January 1993

Authors:

Makoto Konagai

Keywords:

Acceptor, Carbon, GaAs, Heavy Doping, InGaAs

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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