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Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
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Extremely Heavy Doping of Carbon in GaAs and InGaAs
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Carbon and Silicon Impurity Centers in GaAs
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Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Optical Spectroscopy of Shallow Impurity States in...

Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

29-36

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.29

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Online since:

January 1993

Authors:

Bo Monemar, P.O. Holtz, C.I. Harris, Peder Bergman, H. Kalt, M. Sundaram, J.L. Merz, A.C. Gossard, K. Köhler, T. Schweizer

Keywords:

AlGaAs/GaAs QW, Exciton Localization

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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