Paper Titles

Impurity Control in Silicon Crystals for G-Bit Scale Integration
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Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
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Extremely Heavy Doping of Carbon in GaAs and InGaAs
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Carbon and Silicon Impurity Centers in GaAs
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Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
p.53

Self-Compensation in P, As, and N Doped ZnSe
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Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
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Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
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Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Non-Equilibrium Point Defects and Diffusion in...

Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

53-60

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.53

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Online since:

January 1993

Authors:

U.M. Gösele, T.Y. Tan, M. Uematsu, K. Wada

Keywords:

GaAs, Intrinsic Point Defects (IPD), Non-Equilibrium Concentration

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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