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Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
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Extremely Heavy Doping of Carbon in GaAs and InGaAs
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Carbon and Silicon Impurity Centers in GaAs
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Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
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Self-Compensation in P, As, and N Doped ZnSe
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Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Carbon and Silicon Impurity Centers in GaAs

Carbon and Silicon Impurity Centers in GaAs

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

45-52

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.45

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Online since:

January 1993

Authors:

R.C. Newman

Keywords:

Carbon Impurity, Delta-Doping, Local Mode, Silicon Impurity

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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