Paper Titles

Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
p.29

Extremely Heavy Doping of Carbon in GaAs and InGaAs
p.37

Carbon and Silicon Impurity Centers in GaAs
p.45

Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
p.53

Self-Compensation in P, As, and N Doped ZnSe
p.61

Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
p.67

Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
p.75

Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon
p.81

Strong Electron Correlation in Si-OV and Si-V - An Ab Initio Cluster Study -
p.87

HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Self-Compensation in P, As, and N Doped ZnSe

Self-Compensation in P, As, and N Doped ZnSe

Article Preview

Abstract:

You might also be interested in these eBooks

Shallow Impurities in Semiconductors V

Info:

Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

61-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.61

Citation:

Cite this paper

Online since:

January 1993

Authors:

D.J. Chadi, N. Troullier

Keywords:

Self-Compensation, Substituted N, V Acceptor Impurities, ZnSe

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: