Paper Titles

HRTEM Analysis of a Cu-AIN Interface
p.703

Interphase Structure in Refractory Ohmic Contacts Obtained by Electroless Deposition onto III-V Semiconductors
p.707

Reliability of Ni/Al₂O₃ Junctions Made by Solid State Bonding
p.711

Thermodynamics of Metal-Oxide Interfacial Bond: The Role of Oxygen Activity
p.715

Metal Precipitation and the Electronic Properties of Twinned Boundaries in Silicon
p.721

Structure and Electrical Behaviour of Grain Boundaries Allowing Large Critical Currents in Ceramic Superconductors
p.733

Electrically Active ZnO Boundaries
p.737

Interfacial Energy State of Grain Boundaries in Some Electronic Ceramics
p.741

Studies of Microstructure/Critical Current Density Relationships for Grain Boundaries in YBa₂Cu₃O_7-δ Bicrystals
p.745

HomeMaterials Science ForumMaterials Science Forum Vols. 126-128Metal Precipitation and the Electronic Properties...

Metal Precipitation and the Electronic Properties of Twinned Boundaries in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Intergranular and Interphase Boundaries in Materials

Info:

Periodical:

Materials Science Forum (Volumes 126-128)

Pages:

721-732

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.126-128.721

Citation:

Cite this paper

Online since:

January 1993

Authors:

A. Broniatowski

Keywords:

Copper Precipitation, Deep Level Transient Spectroscopy, Electron-Hole Recombination, Silicon Grain Boundaries

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: