Symmetric (011)Tilt Grain Boundaries in Si and Ge: Interfacial Dislocation Concept

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Periodical:

Materials Science Forum (Volumes 126-128)

Edited by:

Ph. Komninou and A. Rocher

Pages:

73-76

DOI:

10.4028/www.scientific.net/MSF.126-128.73

Citation:

J.-L. Putaux et al., "Symmetric (011)Tilt Grain Boundaries in Si and Ge: Interfacial Dislocation Concept", Materials Science Forum, Vols. 126-128, pp. 73-76, 1993

Online since:

January 1993

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$35.00

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