Paper Titles

Electrical and Optical Properties of 3D- and 4D-Transition Metal Related Centers in Silicon
p.809

Nonlinear Zeeman Splitting and Electron-Phonon Coupling
p.815

Hydrogen-Gold-Related Deep Levels in Crystalline Silicon
p.821

In Search of Co-Acceptor Pairs in Highly Doped p-Si: A Mössbauer Spectroscopy Study
p.827

Studies of 3D Ions in III-V Materials by Thermally-Detected Absorption Spectroscopy-Problem of GaP:Cr
p.833

Characterization of Defects in Li-Diffused n-Type GaAs
p.839

Observation and Theory of the H₂* Defect in Silicon
p.845

EPR Identification of Hydrogen Molecules in Bulk Silicon
p.853

Hydrogen Solubility and Defects in Silicon
p.861

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Studies of 3D Ions in III-V Materials by...

Studies of 3D Ions in III-V Materials by Thermally-Detected Absorption Spectroscopy-Problem of GaP:Cr

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

833-838

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.833

Citation:

Cite this paper

Online since:

October 1993

Authors:

A.M. Vasson, M. El-Metoui, A. Erramli, A. Gavaix, Colin A. Bates

Keywords:

3D Impurities, EPR, III-V Compounds, Optical Absorption, Thermal Detection

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: