Spectroscopic Studies of Phase Formation and Diffusion Processes at Interfaces
p.71
p.71
Experimental Investigation of Reactive Phase Formation at Interfaces by Ion Beam Techniques
p.91
p.91
TEM and In Situ HREM for Studying Metal-Semiconductor Interfacial Reactions
p.111
p.111
Simulations of Growth
p.121
p.121
Ordering in Semiconductor Alloys
p.131
p.131
Ab Initio Molecular Dynamics
p.149
p.149
Chemical and Topological Structure of Alloy Surfaces: From Equilibrium to Kinetics
p.165
p.165
Atomic Scale Simulations of Solute-Atom Segregation at Grain Boundaries in Binary FCC Alloys
p.189
p.189
Lattice Kinetic Descriptions for Bulk Reaction-Diffusion Processes: Application to Alloys under Irradiation
p.209
p.209
Ordering in Semiconductor Alloys
Abstract:
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Periodical:
Materials Science Forum (Volumes 155-156)
Pages:
131-148
Citation:
Online since:
May 1994
Authors:
Keywords:
Al1-xGaxAs, Al1-xInxAs, Al1-xInxP, AlGaAs, AllnAs, AllnP, Alloy, Chalcopyrite Structure, CuAu-l Structure, CuPt Structure, First-Principle Calculations, Ga1-xAsxSb, Ga1-xInxP, GaAs1-xPx, GaAsP, GaAsSb, GalnP, LAPW Method, Ordering, Pseudo-Potential Method, Semiconductor, Si1-xGex, Silicon-Germanium (SiGe), Surface Reconstruction, Zn1-xFexSe, ZnFeSe
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Сopyright:
© 1994 Trans Tech Publications Ltd. All Rights Reserved
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