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HomeMaterials Science ForumMaterials Science Forum Vols. 175-178Vacancy-Oxygen Complexes in Si Probed by Positron...

Vacancy-Oxygen Complexes in Si Probed by Positron Annihilation

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Periodical:

Materials Science Forum (Volumes 175-178)

Pages:

553-556

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.175-178.553

Citation:

Cite this paper

Online since:

November 1994

Authors:

Akira Uedono, T. Kawano, X.H. Li, Long Wei, Shoichiro Tanigawa, Atsushi Ikari, Kazuto Kawakami, Hisayoshi Itoh, Hiroyo Haga

Keywords:

2D-ACAR, Defect, Doppler Broadening Profile, Oxygen, Silicon, Vacancy, Vacancy Oxygen Complex

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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