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HomeMaterials Science ForumMaterials Science Forum Vols. 175-178Role of Implantation-Induced Defects in...

Role of Implantation-Induced Defects in Surface-Oriented Diffusion of Fluorine in Silicon

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Periodical:

Materials Science Forum (Volumes 175-178)

Pages:

545-548

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.175-178.545

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Online since:

November 1994

Authors:

Cs. Szeles, B. Nielsen, P. Asoka-Kumar, Kelvin G. Lynn, M. Anderle, T.P. Ma, G.W. Rubloff

Keywords:

Diffusion, Fluorine, Ion Implantation, Positron Beam, Semiconductor

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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