Paper Titles

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy
p.255

Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers
p.259

Luminescence Yield of SrS:Ce,Na Powders
p.263

Vacancy Control of LPE and MOVPE Grown Cd_xHg_1-xTe by Annealing Techniques
p.267

Investigations of the Hydrostatic Pressure Dependence of the E₀ + Δ₀ Gap, the Excitonic Binding Energy and the Refractive Index of Epitaxial ZnSe layers
p.271

Dynamics of Band Filling in Localized States
p.275

New Luminescence Band in II-VI Semiconductor Crystals with Treated Surfaces
p.279

Degenerate-Four-Wave-Mixing at the Nitrogen Acceptor Bound Exiton in ZnSe Epilayers
p.283

Cyclotron Resonance in II-VI Compounds at High Magnetic Fields and their Bare and Polaron Masses
p.287

HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Investigations of the Hydrostatic Pressure...

Investigations of the Hydrostatic Pressure Dependence of the E₀ + Δ₀ Gap, the Excitonic Binding Energy and the Refractive Index of Epitaxial ZnSe layers

Article Preview

Abstract:

You might also be interested in these eBooks

II-VI Compounds and Semimagnetic Semiconductors

Info:

Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

271-274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.271

Citation:

Cite this paper

Online since:

February 1995

Authors:

G.F. Schötz, Erich Griebl, H. Stanzl, T. Reisinger, W. Gebhardt

Keywords:

Hydrostatic Pressure, II-VI Excitonic Absorption

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: