Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE
p.243
p.243
Indium DX-Like Centers in MBE CdTe Layers
p.247
p.247
Raman Scattering from Acceptor and Donor States in Nitrogen-Doped P-Type Zinc Selenide
p.251
p.251
Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy
p.255
p.255
Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers
p.259
p.259
Luminescence Yield of SrS:Ce,Na Powders
p.263
p.263
Vacancy Control of LPE and MOVPE Grown CdxHg1-xTe by Annealing Techniques
p.267
p.267
Investigations of the Hydrostatic Pressure Dependence of the E0 + Δ0 Gap, the Excitonic Binding Energy and the Refractive Index of Epitaxial ZnSe layers
p.271
p.271
Dynamics of Band Filling in Localized States
p.275
p.275
Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers
Abstract:
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Periodical:
Materials Science Forum (Volumes 182-184)
Pages:
259-262
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Online since:
February 1995
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© 1995 Trans Tech Publications Ltd. All Rights Reserved
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