Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE

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Periodical:

Materials Science Forum (Volumes 182-184)

Edited by:

H. Heinrich and J.B. Mullin

Pages:

243-246

DOI:

10.4028/www.scientific.net/MSF.182-184.243

Citation:

A.L. Gurskii et al., "Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE", Materials Science Forum, Vols. 182-184, pp. 243-246, 1995

Online since:

February 1995

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