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Decrease of the Phase Stability in II-VI Epitaxial Layers due to Strain
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Microspectroscopic Studies of CdSe Single Quantum Well Lasers
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Indium DX-Like Centers in MBE CdTe Layers
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Raman Scattering from Acceptor and Donor States in Nitrogen-Doped P-Type Zinc Selenide
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HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Quantum Yield of Band-Edge Emission between 77 and...

Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE

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II-VI Compounds and Semimagnetic Semiconductors

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Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

243-246

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.243

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Online since:

February 1995

Authors:

A.L. Gurskii, A.N. Gavrilenko, E.V. Lutsenko, G.P. Yablonskii, W. Taudt, B. Wachtendorf, J. Söllner, J. Schmoranzer, M. Heuken

Keywords:

Exciton, MOVPE, Photoluminescence (PL), ZnSe:N, ZnSe-Epilayer

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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