For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Green-Yellow Light-Emitting Diodes on Zinc Telluride Obtained by Laser Doping
p.353
Physics of Gain and Stimulated Emission in II-VI Diode Lasers
p.363
Recent Developments in Semimagnetic Semiconductors
p.371
Molecular Beam Epitaxy and Doping of (CdMgMn)Te Structures
p.383
MOVPE of ZnSe Based Heterostructures for Optoelectronic Applications
p.389
MBE Growth of High Mobility HgSe:Fe Layers
p.395
The Mechanisms of MBE and ALE Growth of ZnTe on GaAs(100) Substrates
p.399
MBE Growth of Sulfur-Based Binary and Ternary Widegap II-VI Alloys Using Elemental Sulfur Source
p.403
MBE Growth of Heterostructures and Superlattices Containing MgTe
p.407

MOVPE of ZnSe Based Heterostructures for Optoelectronic Applications

Article Preview

Abstract:

You might also be interested in these eBooks
II-VI Compounds and Semimagnetic Semiconductors View Preview

Info:

Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

389-394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.389

Citation:

Cite this paper

Online since:

February 1995

Authors:

M. Heuken

Keywords:

MOVPE, Optoelectronic Devices, Precursor, Quantum Well, ZnSe:N

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.