Paper Titles

The Thermal Decomposition of Selected Amines in Relation to the Nitrogen Doping of ZnSe by MOVPE
p.47

Anomalous Diffusion of Hg in CdTe
p.51

The Diffusion of Bromine into CdTe
p.57

Time Dependence of Zinc Diffusion in Bulk CdTe
p.63

Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy
p.69

Analysis of Doping in ZnSe and ZnSSe by Far-Infrared Reflectance under Oblique Incidence
p.73

N-Type Doping of MBE Grown ZnMgSe Using ZnCl₂
p.77

Study of Doping Modulated CdHgTe Structures
p.81

Nanofabrication of II-VI Semiconductor Quantum Wires and Dots
p.87

HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Acceptor-Doping in ZnS/GaAs Grown by Means of the...

Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy

Article Preview

Abstract:

You might also be interested in these eBooks

II-VI Compounds and Semimagnetic Semiconductors

Info:

Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

69-72

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.69

Citation:

Cite this paper

Online since:

February 1995

Authors:

H. Saito, M. Yoneta, Masanori Ohishi, H. Kobashi, C. Hatano, K. Kitani

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: