Paper Titles

Anomalous Diffusion of Hg in CdTe
p.51

The Diffusion of Bromine into CdTe
p.57

Time Dependence of Zinc Diffusion in Bulk CdTe
p.63

Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy
p.69

Analysis of Doping in ZnSe and ZnSSe by Far-Infrared Reflectance under Oblique Incidence
p.73

N-Type Doping of MBE Grown ZnMgSe Using ZnCl₂
p.77

Study of Doping Modulated CdHgTe Structures
p.81

Nanofabrication of II-VI Semiconductor Quantum Wires and Dots
p.87

Nonlinear Absorption and Gain in CdSe and CdSSe Quantum Dots
p.93

HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Analysis of Doping in ZnSe and ZnSSe by...

Analysis of Doping in ZnSe and ZnSSe by Far-Infrared Reflectance under Oblique Incidence

Article Preview

Abstract:

You might also be interested in these eBooks

II-VI Compounds and Semimagnetic Semiconductors

Info:

Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

73-76

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.73

Citation:

Cite this paper

Online since:

February 1995

Authors:

J. Hermans, V. Offermann, J. Woitok, J. Geurts, H. Stanzl, W. Gebhardt

Keywords:

Doping, FIR-Reflectance, ZnSe, ZnSSe

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: