Paper Titles

Limitations of the Structural Unit Model
p.333

Prediction of the BCC Structure in a Cu ∑3-84° <211> Tilt Grain Boundary and its Confirmation by HRTEM
p.337

Diffraction Contrast Measurements of Body Translation Vectors in Pseudo-Symmetric Crystals
p.341

Grain Boundaries in Bamboo Structures
p.345

Progress on Tight-Binding Calculations of Silicon Grain Boundaries Containing Nickel Impurities
p.349

Atomic Structure of a ∑ = 9 <011> Si₃N₄ Tilt Grain Boundary
p.353

Interphase Boundaries between SiC and Si₃N₄
p.357

HRTEM Observations of a Cu-MgO Interface
p.361

Investigation of Nanocrystalline Fe by Small-Angle Neutron Scattering
p.365

HomeMaterials Science ForumMaterials Science Forum Vols. 207-209Progress on Tight-Binding Calculations of Silicon...

Progress on Tight-Binding Calculations of Silicon Grain Boundaries Containing Nickel Impurities

Article Preview

Abstract:

You might also be interested in these eBooks

Intergranular and Interphase Boundaries in Materials II

Info:

Periodical:

Materials Science Forum (Volumes 207-209)

Pages:

349-352

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.207-209.349

Citation:

Cite this paper

Online since:

February 1996

Authors:

M. Torrent, O.B.M. Hardouin Duparc

Keywords:

Electronic Structure, Grain Boundary, Nickel Ni, Numerical Simulation, Silicon, Tight Binding

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: