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HomeMaterials Science ForumMaterials Science Forum Vols. 223-224Analytical Model for Recombination Mechanism in...

Analytical Model for Recombination Mechanism in Amorphous Silicon P-I-N Solar Cell

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Disordered Materials

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Periodical:

Materials Science Forum (Volumes 223-224)

Pages:

241-244

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.223-224.241

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Online since:

July 1996

Authors:

S.R. Dhariwal, B.M. Deoraj, S. Rajvanshi

Keywords:

Capture Rates, Correlation Energy, Dangling Bond, Recombination

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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